Document Type
Conference Paper
Authors
Deal, William R. (Northrop Grumman Corp. Redondo Beach, CA, United States)
Chattopadhyay, Goutam (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
June 17, 2012
Subject Category
Electronics and Electrical Engineering Meeting Information
International Microwave Symposium(Montreal)
Funding Number(s)
CONTRACT_GRANT: HR0011-09-C-0062
Distribution Limits
Public
Keywords
High electron mobility transistor (HEMT)submilliteter waveindium phosphide