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InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote SensingThe operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.
Document ID
20120018093
Document Type
Conference Paper
External Source(s)
hdl:2014/42339
Authors
Deal, William R. (Northrop Grumman Corp. Redondo Beach, CA, United States)
Chattopadhyay, Goutam (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
June 17, 2012
Subject Category
Electronics and Electrical Engineering
Meeting Information
International Microwave Symposium(Montreal)
Funding Number(s)
CONTRACT_GRANT: HR0011-09-C-0062
Distribution Limits
Public
Copyright
Other
Keywords
High electron mobility transistor (HEMT)
submilliteter wave
indium phosphide