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Improved Reliability of SiC Pressure Sensors for Long Term High Temperature ApplicationsWe report advancement in the reliability of silicon carbide pressure sensors operating at 600 C for extended periods. The large temporal drifts in zero pressure offset voltage at 600 C observed previously were significantly suppressed to allow improved reliable operation. This improvement was the result of further enhancement of the electrical and mechanical integrity of the bondpad/contact metallization, and the introduction of studded bump bonding on the pad. The stud bump contact promoted strong adhesion between the Au bond pad and the Au die-attach. The changes in the zero offset voltage and bridge resistance over time at temperature were explained by the microstructure and phase changes within the contact metallization, that were analyzed with Auger electron spectroscopy (AES) and field emission scanning electron microscopy (FE-SEM).
Document ID
20130000506
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Okojie, R. S.
(NASA Glenn Research Center Cleveland, OH, United States)
Nguyen, V.
(Sienna Technologies, Inc. Woodinville, WA, United States)
Savrun, E.
(Sienna Technologies, Inc. Woodinville, WA, United States)
Lukco, D.
(ASRC Research Corp. Cleveland, OH, United States)
Date Acquired
August 27, 2013
Publication Date
June 5, 2011
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-18516
Meeting Information
Meeting: Transducers'' 11. 16th International Conference on Solid-State Sensors, Actuators and Microsystems
Location: Beijing
Country: China
Start Date: June 5, 2011
End Date: June 9, 2011
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
WBS: WBS 685676.08.03.04.04
WBS: WBS 699959.02.09.03.03
CONTRACT_GRANT: Th2B.001
WBS: WBS 561581.02.08.03.16.02
Distribution Limits
Public
Copyright
Other

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