NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Total Dose Effects on Bipolar Integrated Circuits at Low TemperatureTotal dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.
Document ID
20130010591
Document Type
Conference Paper
External Source(s)
Authors
Johnston, A. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Swimm, R. T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thorbourn, D. O. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 27, 2013
Publication Date
July 7, 2012
Subject Category
Electronics and Electrical Engineering
Meeting Information
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2012)(Miami, FL)
Distribution Limits
Public
Copyright
Other
Keywords
linear integrated circuits
low temperatures
total dose effects
space radiation