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Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERIONSilicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
Document ID
20130013125
Document Type
Other
Authors
Patterson, Richard (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (ASRC Aerospace Corp. Cleveland, OH, United States)
Date Acquired
August 27, 2013
Publication Date
March 1, 2010
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
E-17347
Funding Number(s)
CONTRACT_GRANT: NNC06BA07B
WBS: WBS 724297:40:49;03;01
Distribution Limits
Public
Copyright
Public Use Permitted.

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