NTRS - NASA Technical Reports Server

Back to Results
Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power TransistorsThe power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.
Document ID
Document Type
Patterson, Richard L.
(NASA Glenn Research Center Cleveland, OH United States)
Boomer, Kristen T.
(NASA Glenn Research Center Cleveland, OH United States)
Scheick, Leif
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Hammoud, Ahmad
(Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
July 31, 2014
Publication Date
June 17, 2014
Subject Category
Quality Assurance And Reliability
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: Annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW)
Location: Greenbelt, MD
Country: United States
Start Date: June 17, 2014
End Date: June 19, 2014
Sponsors: NASA Headquarters
Funding Number(s)
WBS: WBS 724297.
Distribution Limits
Public Use Permitted.
thermal cycling tests
extraterrestrial radiation
field effect transistor
No Preview Available