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Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power TransistorsThe power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.
Document ID
20140010370
Document Type
Presentation
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH United States)
Boomer, Kristen T. (NASA Glenn Research Center Cleveland, OH United States)
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
July 31, 2014
Publication Date
June 17, 2014
Subject Category
Quality Assurance and Reliability
Electronics and Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN15774
Meeting Information
Annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW)(Greenbelt, MD)
Funding Number(s)
CONTRACT_GRANT: NNC12BA01B
WBS: WBS 724297.40.49.03.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
thermal cycling tests
extraterrestrial radiation
field effect transistor

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