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Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETsThe power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.
Document ID
20140010475
Document Type
Presentation
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH United States)
Scheick, Leif (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lauenstein, Jean-Marie (NASA Glenn Research Center Cleveland, OH, United States)
Casey, Megan (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
August 6, 2014
Publication Date
November 1, 2013
Subject Category
Electronics and Electrical Engineering
Space Radiation
Report/Patent Number
GRC-E-DAA-TN12209
Funding Number(s)
CONTRACT_GRANT: NNC12BA01B
WBS: WBS 724297.40.49.03.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
field effect transistor
thermal cycling tests
extraterrestrial radiation

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