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Impact of Total Ionizing Dose Radiation Testing and Long-Term Thermal Cycling on the Operation of CMF20120D Silicon Carbide Power MOSFETPower systems designed for use in NASA space missions are required to work reliably under harsh conditions including radiation, thermal cycling, and extreme temperature exposures. Silicon carbide devices show great promise for use in future power electronics systems, but information pertaining to performance of the devices in the space environment is very scarce. A silicon carbide N-channel enhancement-mode power MOSFET called the CMF20120 is of interest for use in space environments. Samples of the device were exposed to radiation followed by long-term thermal cycling to address their reliability for use in space applications. The results of the experimental work are presentd and discussed.
Document ID
Document Type
Patterson, Richard L.
(NASA Glenn Research Center Cleveland, OH United States)
Scheidegger, Robert J.
(NASA Glenn Research Center Cleveland, OH United States)
Lauenstein, Jean-Marie
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Scheick, Leif
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hammoud, Ahmad
(Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
August 27, 2014
Publication Date
September 1, 2013
Subject Category
Space Radiation
Electronics And Electrical Engineering
Report/Patent Number
Funding Number(s)
WBS: WBS 724297.
Distribution Limits
Public Use Permitted.
thermal cycling tests
field effect transistor
extreterrestrial radiation

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