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High-Throughput Processes and Structural Characterization of Single-Nanotube Based Devices for 3D ElectronicsWe have developed manufacturable approaches to form single, vertically aligned carbon nanotubes, where the tubes are centered precisely, and placed within a few hundred nm of 1-1.5 micron deep trenches. These wafer-scale approaches were enabled by chemically amplified resists and inductively coupled Cryo-etchers to form the 3D nanoscale architectures. The tube growth was performed using dc plasmaenhanced chemical vapor deposition (PECVD), and the materials used for the pre-fabricated 3D architectures were chemically and structurally compatible with the high temperature (700 C) PECVD synthesis of our tubes, in an ammonia and acetylene ambient. The TEM analysis of our tubes revealed graphitic basal planes inclined to the central or fiber axis, with cone angles up to 30 deg. for the particular growth conditions used. In addition, bending tests performed using a custom nanoindentor, suggest that the tubes are well adhered to the Si substrate. Tube characteristics were also engineered to some extent, by adjusting growth parameters, such as Ni catalyst thickness, pressure and plasma power during growth.
Document ID
20150005994
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Kaul, A. B.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Megerian, K. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Baron, R. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jennings, A. T.
(California Inst. of Tech. Pasadena, CA, United States)
Jang, D.
(California Inst. of Tech. Pasadena, CA, United States)
Greer, J. R.
(California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
April 21, 2015
Publication Date
April 25, 2011
Subject Category
Electronics And Electrical Engineering
Mechanical Engineering
Nonmetallic Materials
Meeting Information
Meeting: 2011 SPIE Defense Security and Sensing Conference
Location: Orlando, FL
Country: United States
Start Date: April 25, 2011
End Date: April 29, 2011
Sponsors: International Society for Optical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
top-down fabrication
bottom-up synthesis
plasmaenhanced chemical vapor deposition (PECVD)
3D electronics
nanofabrication

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