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Improving Single Event Effects Testing Through SoftwareRadiation encountered in space environments can be damaging to microelectronics and potentially cause spacecraft failure. Single event effects (SEE) are a type of radiation effect that occur when an ion strikes a device. Single event gate rupture (SEGR) is a type of SEE that can cause failure in power transistors. Unlike other SEE rates in which a constant linear energy transfer (LET) can be used, SEGR rates sometimes require a non-uniform LET to be used to be accurate. A recent analysis shows that SEGR rates are most easily calculated when the environment is described as a stopping rate per unit volume for each ion species. Stopping rates in silicon for pertinent ions were calculated using the Stopping and Range of Ions in Matter (SRIM) software and CREME-MC software. A reference table was generated and can be used by others to calculate SEGR rates for a candidate device. Additionally, lasers can be used to simulate SEEs, providing more control and information at lower cost than heavy ion testing. The electron/hole pair generation rate from a laser pulse in a semiconductor can be related to the LET of an ion. MATLAB was used to generate a plot to easily make this comparison.
Document ID
20150006553
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other
External Source(s)
Authors
Banker, M. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
April 23, 2015
Publication Date
August 1, 2011
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other
Keywords
generation equation
seingle event gate rupture (SEGR)
stopping rate
laser testing

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