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Radiation Characterization of Commercial GaN DevicesRadiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.
Document ID
20150006784
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Harris, Richard D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Scheick, Leif Z.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hoffman, James P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thrivikraman, Tushar
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jenabi, Masud
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Gim, Yonggyu
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Miyahira, Tetsuo
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
April 27, 2015
Publication Date
July 26, 2011
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Las Vegas, NV
Country: United States
Start Date: July 25, 2011
End Date: July 29, 2011
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
HEMT
DDD/TID study
wide bandgap semiconductors

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