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Record Details

Record 47 of 9428
Radiation Characterization of Commercial GaN Devices
External Online Source: hdl:2014/43820
Author and Affiliation:
Harris, Richard D.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Scheick, Leif Z.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Hoffman, James P.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Thrivikraman, Tushar(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Jenabi, Masud(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Gim, Yonggyu(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Miyahira, Tetsuo(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Abstract: Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.
Publication Date: Jul 26, 2011
Document ID:
20150006784
(Acquired Apr 28, 2015)
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Conference Paper
Meeting Information: IEEE Nuclear and Space Radiation Effects Conference (NSREC) ; 25-29 Jul. 2011; Las Vegas, NV; United States
Meeting Sponsor: Institute of Electrical and Electronics Engineers; New York, NY, United States
Financial Sponsor: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 5p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: GALLIUM NITRIDES; RADIATION EFFECTS; ELECTRONIC EQUIPMENT TESTS; ENVIRONMENTAL TESTS; METAL OXIDE SEMICONDUCTORS; COMMERCIAL OFF-THE-SHELF PRODUCTS; SEMICONDUCTORS (MATERIALS); FIELD EFFECT TRANSISTORS
Other Descriptors: WIDE BANDGAP SEMICONDUCTORS; HEMT; DDD/TID STUDY
Availability Source: Other Sources
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