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Dose Rate Effects in Linear Bipolar TransistorsDose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.
Document ID
20150006982
Document Type
Conference Paper
External Source(s)
Authors
Johnston, Allan
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Swimm, Randall
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Harris, R. D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thorbourn, Dennis
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
April 30, 2015
Publication Date
July 25, 2011
Subject Category
Electronics And Electrical Engineering
Meeting Information
2011 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2011)(Las Vegas, NV)
Distribution Limits
Public
Copyright
Other
Keywords
linear integrated circuit
dose rate effects
space radiation
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