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The DUV Stability of Superlattice-Doped CMOS Detector ArraysIn this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.
Document ID
20150007343
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Hoenk, M. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Carver, A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jones, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Dickie, M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cheng, P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Greer, H. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Nikzad, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Sgro, J.
(Alacron, Inc. Nashua, NH, United States)
Date Acquired
May 5, 2015
Publication Date
June 12, 2013
Subject Category
Instrumentation And Photography
Meeting Information
Meeting: International Image Sensors Workshop (IISW)
Location: Snowbird, UT
Country: United States
Start Date: June 12, 2013
End Date: June 16, 2013
Sponsors: International Image Sensor Society (IISS)
Distribution Limits
Public
Copyright
Other
Keywords
doped silicon surfaces
quantum engineering

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