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high throughput, high yield fabrication of high quantum efficiency back-illuminated photon counting, far uv, uv, and visible detector arraysIn this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).
Document ID
20150007359
Document Type
Conference Paper
External Source(s)
Authors
Nikzad, Shouleh
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hoenk, M. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Carver, A. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Jones, T. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Greer, F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Hamden, E.
(Columbia Univ. New York, NY, United States)
Goodsall, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
May 5, 2015
Publication Date
June 12, 2013
Subject Category
Atomic and Molecular Physics
Electronics and Electrical Engineering
Meeting Information
2013 International Image Sensor Workshop (IISW)(Snowbird, UT)
Distribution Limits
Public
Copyright
Other
Keywords
spectroscopy
molecular beam epitaxy (MBE)