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Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated CircuitsA significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.
Document ID
20150007847
Document Type
Conference Paper
External Source(s)
Authors
Johnston, A. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Swimm, R. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Thorbourn, D. O.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
May 11, 2015
Publication Date
July 8, 2013
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2013 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2013)
Location: San Francisco, CA
Country: United States
Start Date: July 8, 2013
End Date: July 12, 2013
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Other
Keywords
ionizing radiation
bipolar transistor
total dose
recombination
charge yield
radiation effects
electrons

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