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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed CantileversThis paper reports on initial results from the first device tested of a "second generation" Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With proper selection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20 ppm was achieved. A stable sensor current gain of 125 +/- 11 standard deviation was demonstrated during 250 hours of cyclic test exposures to 0.5% H2 and N2/air.
Document ID
20150022221
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Trunek, Andrew J.
(Ohio Aerospace Inst. Cleveland, OH, United States)
Evans, Laura J.
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liang-Yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Hunter, Gary W.
(NASA Glenn Research Center Cleveland, OH, United States)
Androjna, Drago
(Sierra Lobo, Inc. Cleveland, OH, United States)
Date Acquired
December 3, 2015
Publication Date
October 14, 2007
Publication Information
Publication: Materials Science Forum
Publisher: Trans Tech Publications, Switzerland
Volume: 600-603
Subject Category
Chemistry And Materials (General)
Report/Patent Number
GRC-WO-667833
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials
Location: Otsu
Country: Japan
Start Date: October 14, 2007
End Date: October 19, 2007
Funding Number(s)
WBS: WBS 122711.03.11.03.04.03.02
Distribution Limits
Public
Copyright
Public Use Permitted.
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