NTRS - NASA Technical Reports Server
Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature RangeSilicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH United States) Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
December 15, 2015
September 1, 2015
Electronics And Electrical Engineering
WBS: WBS 724297.40.49.03.01
Public Use Permitted.
Transistor Gate DriveSiC DevicesThermal Cycling
Available Downloads 20150023034.pdf STI