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Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature RangeSilicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.
Document ID
20150023034
Document Type
Conference Paper
Authors
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
December 15, 2015
Publication Date
September 1, 2015
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN25898
Funding Number(s)
WBS: WBS 724297.40.49.03.01
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Transistor Gate Drive
SiC Devices
Thermal Cycling

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