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Degradation of Leakage Currents and Reliability Prediction for Tantalum CapacitorsTwo types of failures in solid tantalum capacitors, catastrophic and parametric, and their mechanisms are described. Analysis of voltage and temperature reliability acceleration factors reported in literature shows a wide spread of results and requires more investigation. In this work, leakage currents in two types of chip tantalum capacitors were monitored during highly accelerated life testing (HALT) at different temperatures and voltages. Distributions of degradation rates were approximated using a general log-linear Weibull model and yielded voltage acceleration constants B = 9.8 +/- 0.5 and 5.5. The activation energies were Ea = 1.65 eV and 1.42 eV. The model allows for conservative estimations of times to failure and was validated by long-term life test data. Parametric degradation and failures are reversible and can be annealed at high temperatures. The process is attributed to migration of charged oxygen vacancies that reduce the barrier height at the MnO2/Ta2O5 interface and increase injection of electrons from the MnO2 cathode. Analysis showed that the activation energy of the vacancies' migration is ~ 1.1 eV.
Document ID
20160001192
Document Type
Conference Paper
Authors
Teverovsky, Alexander (ASRC Federal Space and Defense Greenbelt, MD, United States)
Date Acquired
January 27, 2016
Publication Date
January 25, 2016
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN26842
Meeting Information
2016 Annual Reliability and Maintainability Symposium (RAMS)(Tucson, AZ)
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
acceleration factors
tantalum capacitors
leakage current
degradation
failures

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