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Processing and Characterization of Thousand-Hour 500 C Durable 4H-SiC JFET Integrated CircuitsThis work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 C in air ambient. These ICs are based on 4H-SiC junction field effect transistor (JFET) technology that integrates hafnium ohmic contacts with TaSi2 interconnects and SiO2 and Si3N4 dielectric layers over approximately 1-micrometer scale vertical topology. Following initial burn-in, important circuit parameters remain stable for more than 1000 hours of 500 C operational testing. These results advance the technology foundation for realizing long-term durable 500 C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.
Document ID
20160014879
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Spry, David J.
(NASA Glenn Research Center Cleveland, OH United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH United States)
Chen, Liang-Yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Lukco, Dorothy
(Vantage Partners, LLC Cleveland, OH, United States)
Chang, Carl W.
(Vantage Partners, LLC Cleveland, OH, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH, United States)
Krasowski, Michael J.
(NASA Glenn Research Center Cleveland, OH, United States)
Prokop, Norman F.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
December 29, 2016
Publication Date
May 10, 2016
Subject Category
Electronics And Electrical Engineering
Solid-State Physics
Report/Patent Number
GRC-E-DAA-TN31389
Meeting Information
Meeting: High Temperature Electronics (HiTEC 2016)
Location: Albuquerque, NM
Country: United States
Start Date: May 10, 2016
End Date: May 12, 2016
Sponsors: International Microelectronics Assembly and Packaging Society (iMAPS)
Funding Number(s)
WBS: WBS 109492.02.03.02.11
CONTRACT_GRANT: NNC12BA01B
CONTRACT_GRANT: NNC13BA10B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Microelectronics
Silicon Carbide
JFET
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