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Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash MemoryWe investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.
Document ID
20170003330
Document Type
Reprint (Version printed in journal)
Authors
Chen, Dakai (NASA Goddard Space Flight Center Greenbelt, MD United States)
Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States)
Ladbury, Raymond L. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Seidleck, Christina (ASRC Federal Space and Defense Greenbelt, MD, United States)
Label, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
April 11, 2017
Publication Date
October 6, 2016
Publication Information
Publication: IEEE Transactions on Nuclear Science (TNS)
Volume: 64
Issue: 1
ISSN: 0018-9499
Subject Category
Electronics and Electrical Engineering
Space Radiation
Report/Patent Number
GSFC-E-DAA-TN41048
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Other
Keywords
NAND flash memory
heavy ion testing
Flash memories
standards
Single Event Effects (SEE)
single-event effect
testing techniques
testing guidelines

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