Document Type
Reprint (Version printed in journal)
Authors
Chen, Dakai (NASA Goddard Space Flight Center Greenbelt, MD United States) Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States) Ladbury, Raymond L. (NASA Goddard Space Flight Center Greenbelt, MD United States) Kim, Hak (ASRC Federal Space and Defense Greenbelt, MD, United States) Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States) Seidleck, Christina (ASRC Federal Space and Defense Greenbelt, MD, United States) Label, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD United States) Date Acquired
April 11, 2017
Publication Date
October 6, 2016
Publication Information
Publication: IEEE Transactions on Nuclear Science (TNS)
Volume: 64
Issue: 1
ISSN: 0018-9499
Subject Category
Electronics And Electrical EngineeringSpace Radiation Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Keywords
NAND flash memory heavy ion testingFlash memories standardsSingle Event Effects (SEE) single-event effect testing techniques testing guidelines Related Records
20160009116See AlsoHeavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory