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Body of Knowledge for Silicon Carbide Power ElectronicsWide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.
Document ID
20170003922
Document Type
Other
Authors
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH United States)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Hammoud, Ahmad (Vantage Partners, LLC Cleveland, OH, United States)
Date Acquired
April 27, 2017
Publication Date
September 13, 2016
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN35760
Funding Number(s)
WBS: WBS 724297.40.49.03.01
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Silicon Carbide Power Electronics

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