NTRS - NASA Technical Reports Server
Body of Knowledge for Silicon Carbide Power ElectronicsWide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH United States) Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States) Hammoud, Ahmad (Vantage Partners, LLC Cleveland, OH, United States)
April 27, 2017
September 13, 2016
Electronics And Electrical Engineering
WBS: WBS 724297.40.49.03.01
Public Use Permitted.
Silicon Carbide Power Electronics
Available Downloads 20170003922.pdf STI