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Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition DependenceExperimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
Document ID
20170010182
Document Type
Reprint (Version printed in journal)
Authors
Javanainen, Arto (Jyvaskyla Univ. Finland)
Galloway, Kenneth F. (Vanderbilt Univ. Nashville, TN, United States)
Nicklaw, Christopher (Silvaco Data Systems, Inc. Santa Clara, CA, United States)
Bosser, Alexandre L. (Silvaco Data Systems, Inc. Santa Clara, CA, United States)
Ferlet-Cavrois, Veronique (European Space Agency. European Space Research and Technology Center, ESTEC Noordwijk, Netherlands)
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Pintacuda, Francesco (ST Microelectronics Catania, Italy)
Reed, Robert A. (Vanderbilt Univ. Nashville, TN, United States)
Schrimpf, Ronald D. (Vanderbilt Univ. Nashville, TN, United States)
Weller, Robert A. (Vanderbilt Univ. Nashville, TN, United States)
Virtanen, Ari Juha (Jyvaskyla Univ. Finland)
Date Acquired
October 18, 2017
Publication Date
October 12, 2016
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 64
Issue: 1
ISSN: 0018-9499
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN46605
Distribution Limits
Public
Copyright
Other
Keywords
modeling
ion radiation effects
silicon carbide
Schottky diodes
Current-voltage characteristics
power semiconductor devices