Document Type
Reprint (Version printed in journal)
Authors
Javanainen, Arto (Jyvaskyla Univ. Finland) Galloway, Kenneth F. (Vanderbilt Univ. Nashville, TN, United States) Nicklaw, Christopher (Silvaco Data Systems, Inc. Santa Clara, CA, United States) Bosser, Alexandre L. (Silvaco Data Systems, Inc. Santa Clara, CA, United States) Ferlet-Cavrois, Veronique (European Space Agency. European Space Research and Technology Center, ESTEC Noordwijk, Netherlands) Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States) Pintacuda, Francesco (ST Microelectronics Catania, Italy) Reed, Robert A. (Vanderbilt Univ. Nashville, TN, United States) Schrimpf, Ronald D. (Vanderbilt Univ. Nashville, TN, United States) Weller, Robert A. (Vanderbilt Univ. Nashville, TN, United States) Virtanen, Ari Juha (Jyvaskyla Univ. Finland) Date Acquired
October 18, 2017
Publication Date
October 12, 2016
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 64
Issue: 1
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering Distribution Limits
Public
Keywords
modeling ion radiation effects silicon carbide Schottky diodesCurrent-voltage characteristics power semiconductor devices