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Fabricating Ultra-Thin Silicon Carbide DiaphragmsA process for fabricating relatively thin SiC diaphragms may include fast Reactive Ion Etching (RIE) followed by Dopant Selective Reactive Ion Etching (DSRIE). The process may produce silicon carbide (SiC) diaphragms thinner than 10 microns. These thinner, more sensitive diaphragms may then be used to effectively resolve sub-psi pressures in jet engines, for example.
Document ID
20180003635
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Okojie, Robert S.
Date Acquired
June 29, 2018
Publication Date
May 22, 2018
Subject Category
Mechanical Engineering
Report/Patent Number
Patent Number: US-Patent-9,975,765
Patent Application Number: US-Patent-Appl-SN-15/381,736
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,975,765
Patent Application
US-Patent-Appl-SN-15/381,736
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