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Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit ChipsA process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).
Document ID
20180003640
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Spry, David J.
Neudeck, Philip G.
Date Acquired
June 29, 2018
Publication Date
May 22, 2018
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,978,686
Patent Application
US-Patent-Appl-SN-15/438,130
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