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Simultaneous Ohmic Contact to Silicon CarbideA simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.
Document ID
20190000797
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Okojie, Robert S.
Date Acquired
February 14, 2019
Publication Date
January 29, 2019
Subject Category
Nonmetallic Materials
Report/Patent Number
Patent Application Number: US-Patent-Appl-SN-14/456,015
Patent Number: US-Patent-10,192,970
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-10,192,970
Patent Application
US-Patent-Appl-SN-14/456,015

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