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Simultaneous Ohmic Contact to Silicon CarbideA simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.
Document ID
20190000797
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Okojie, Robert S.
Date Acquired
February 14, 2019
Publication Date
January 29, 2019
Subject Category
Nonmetallic Materials
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-10,192,970
Patent Application
US-Patent-Appl-SN-14/456,015

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