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Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature RangeEmerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.
Document ID
20190025470
Document Type
Other
Authors
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH, United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
June 1, 2019
Publication Date
May 30, 2019
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN68254
Funding Number(s)
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Wide Bandgap Semiconductors
Gate Driver

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