NTRS - NASA Technical Reports Server
Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature RangeEmerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH, United States) Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
June 1, 2019
May 30, 2019
Electronics And Electrical Engineering
Public Use Permitted.
Wide Bandgap SemiconductorsGate Driver
Available Downloads 20190025470.pdf STI