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Risk Methodology for SEE Caused by Proton-Induced Fission of High-Z Materials in Microelectronics PackagingProton-induced fission of high-Z (Atomic Number) materials can produce high fluxes of high-LET (Linear Energy Transfer) ions in microelectronics. We develop methods to evaluate risks for a range of destructive and nondestructive SEE (Single-Event Effects) modes caused by this threat.
Document ID
20190027328
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Ladbury, Ray (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
July 15, 2019
Publication Date
July 12, 2019
Subject Category
Quality Assurance And Reliability
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN69966
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC 2019)
Location: San Antonio, TX
Country: United States
Start Date: July 8, 2019
End Date: July 12, 2019
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert
Keywords
Reliability Estimation
Quality Assurance
Protons
Single-Event Effects (SEE)

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