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A New Method to Grow SiC: Solvent-Laser Heated Floating ZoneThe solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.
Document ID
20120016720
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Woodworth, Andrew A.
(Ohio Aerospace Inst. Brook Park, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Sayir, Ali
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 26, 2013
Publication Date
November 23, 2012
Subject Category
Chemistry And Materials (General)
Report/Patent Number
GRC-E-DAA-TN6020
E-18524
Meeting Information
Meeting: 6th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)
Location: Kona, HI
Country: United States
Start Date: November 19, 2012
End Date: November 23, 2012
Sponsors: Japan Society for the Promotion of Science
Funding Number(s)
CONTRACT_GRANT: SAA3-1048
WBS: WBS 031102.02.03.0781.12
CONTRACT_GRANT: DE-EE0001093/001
TASK: NNC07TA96T
Distribution Limits
Public
Copyright
Public Use Permitted.
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