Assessment of high temperature metallizations for I(2)L and CMOS technologies

High temperature barrier metallizations were assessed and tested for I(2)L and CMOS applications. Life tests were accelerated to 375 C in view of the -55 C to +300 C temperature range established for engine-located electronics without fuel cooling. The gold-refractory metallizations evaluated were Au-TiW-PtSi, Au-TiW/TiO2/TiW-PtSi and Au-TiW(N)-PtSi. These metallization systems were thermally annealed to at least 375 C for up to 250 hours. The critical requirement for stable diffusion barrier is the TiW grain size. Small grain (250A-500A) films were observed to be stable up to 375 C. Deposition to TiW diffusion barrier in the presence of oxygen and nitrogen also results in an effective diffusion barrier. Auger electron spectroscopy profiles of the PtSi indicates some penetration by the TiW. In the case of PtSi/TiW interface, the redistribution of oxygen further passivates the system by forming a TiO2 layer at the interface.