Process characteristics and design methods for a 300 deg quad OP amp

The results of process characterization, circuit design, and reliability studies for the development of a quad OP amplifier intended for use up to 300 C are presented. A dielectrically isolated complementary vertical bipolar process was chosen to fabricate the amplifier in order to eliminate isolation leakage and the possibility of latch up. Characterization of NPN and PNP junctions showed them to be suitable for use up to 300 C. Interconnect reliability was predicted to be greater than four years mean time between failure. Parasitic MOS formation was eliminated by isolation of each device.