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Ohmic contacts, irradiation effects, and thin film growth of GaAs and Al sub 1-x Ga sub x AsThe effects of interfacial chemistry on the electrical properties of metal contacts to gallium arsenides and aluminum gallium arsenides are determined.
Document ID
19840011028
Acquisition Source
Legacy CDMS
Document Type
Other - Collected Works
Authors
Holloway, P. H. (Florida Univ. Gainesville, FL, United States)
Date Acquired
September 4, 2013
Publication Date
January 31, 1984
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:173257
NASA-CR-173257
Accession Number
84N19096
Funding Number(s)
CONTRACT_GRANT: NAG1-154
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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