NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Effect of Ion Sputtering on the Interface Chemistry and Electrical Properties of Au/n-gaas (100) Schottky ContactsInterface sputter damage effects were measured for Sn-doped (approximately 2x10 to the 17th power/cu cm) 100 oriented GaAs. The sputter surfaces were characterized by Auger and X-ray photoelectron spectroscopy. Gold contacts were then deposited in situ on these characterized surfaces. Results of I-V and C-V measurements are shown in graphs.
Document ID
19840011031
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Wang, Y. X. (Academy of Sciences Beijing, China)
Holloway, P. H. (Florida Univ. Gainesville, FL, United States)
Date Acquired
August 11, 2013
Publication Date
January 31, 1984
Publication Information
Publication: Ohmic Contacts, Irradiation Effects, and Thin Film Growth of GaAs and Al sub 1-x Ga sub x As
Subject Category
Solid-State Physics
Accession Number
84N19099
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.

Related Records

IDRelationTitle19840011028Collected WorksOhmic contacts, irradiation effects, and thin film growth of GaAs and Al sub 1-x Ga sub x As
No Preview Available