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Physics of heavily doped silicon and solar-cell parameter measurementA study of the physics of heavily doped silicon and solar cell parameter measurement was undertaken. The parameters investigated were energy gap, lifetime, recombination velocity, diffusivity, mobility and if N or P is high.
Document ID
19850024105
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Lindholm, F. A. (Florida Univ. Gainesville, FL, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: JPL Proc. of the 24th Project Integration Meeting
Subject Category
Energy Production And Conversion
Accession Number
85N32418
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850024081Collected WorksProceedings of the 24th Project Integration Meeting
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