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High-temperature Complementary Metal Oxide Semiconductors (CMOS)The results of an investigation into the possibility of using complementary metal oxide semiconductor (CMOS) technology for high temperature electronics are presented. A CMOS test chip was specifically developed as the test bed. This test chip incorporates CMOS transistors that have no gate protection diodes; these diodes are the major cause of leakage in commercial devices.
Document ID
19820007460
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mcbrayer, J. D.
(Sandia National Labs. Albuquerque, NM, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
SAND-81-0345C
Accession Number
82N15333
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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