Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation  Final report, 1 Feb. - 15 Jul. 1965

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Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation Final report, 1 Feb. - 15 Jul. 1965

Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices

Document ID

19660006701

Acquisition Source

Legacy CDMS

Document Type

Contractor Report (CR)

Authors

Date Acquired

August 3, 2013

Publication Date

January 1, 1965

Subject Category

Report/Patent Number

Accession Number

66N15990

Funding Number(s)

Distribution Limits

Public

Work of the US Gov. Public Use Permitted.

Keywords

Name

Type

STI

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NTRS