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Process techniques study of integrated circuits Interim scientific report, May 1968 - Feb. 1969Oxide defects and shear stress effects in integrated circuits
Document ID
19690022836
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Brandewie, J. V. (North American Rockwell Corp. Anaheim, CA, United States)
Eisenberg, P. H. (North American Rockwell Corp. Anaheim, CA, United States)
Date Acquired
August 5, 2013
Publication Date
June 1, 1969
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-86182
ISR-2
Report Number: NASA-CR-86182
Report Number: ISR-2
Accession Number
69N32214
Funding Number(s)
CONTRACT_GRANT: NAS12-4
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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