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The 20 GHz spacecraft IMPATT solid state transmitterThe engineering development of a solid-state transmitter amplifier operating in the 20-GHz frequency range is described. This effort involved a multitude of disciplines including IMPATT device development, circulator design, multiple-diode circuit design, and amplifier integration and test. The objective was to develop a transmitter amplifier demonstrating the feasibility of providing an efficient, reliable, lightweight solid-state transmitter to be flown on a 30 to 20 GHz communication demonstration satellite. The work was done under contract from NASA/Lewis Research Center for a period of three years. The result was the development of a GaAs IMPACT diode amplifier capable of an 11-W CW output power and a 2-dB bandwidth of 300 MHz. GaAs IMPATT diodes incorporating diamond heatsink and double-Read doping profile capable of 5.3-W CW oscillator output power and 15.5% efficiency were developed. Up to 19% efficiency was also observed for an output power level of 4.4 W. High performance circulators with a 0.2 dB inserting loss and bandwidth of 5 GHz have also been developed. These represent a significant advance in both device and power combiner circuit technologies in K-band frequencies.
Document ID
19870008556
Document Type
Contractor Report (CR)
Authors
Best, T. (TRW Electronic Systems Group Redondo Beach, CA, United States)
Ngan, Y. C. (TRW Electronic Systems Group Redondo Beach, CA, United States)
Date Acquired
September 5, 2013
Publication Date
September 1, 1986
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Report/Patent Number
NAS 1.26:179545
NASA-CR-179545
S/N-36779
Funding Number(s)
PROJECT: RTOP 650-60-22
CONTRACT_GRANT: NAS3-22492
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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