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Characterization of production GaAs solar cells for spaceThe electrical performance of GaAs solar cells was characterized as a function of irradiation with protons and electrons with the underlying goal of producing solar cells suitable for use in space. Proton energies used varied between 50 keV and 10 MeV, and damage coefficients were derived for liquid phase epitaxy GaAs solar cells. Electron energies varied between 0.7 and 2.4 MeV. Cells from recent production runs were characterized as a function of electron and proton irradiation. These same cells were also characterized as a function of solar intensity and operating temperature, both before and after the electron irradiations. The long term stability of GaAs cells during photon exposure was examined. Some cells were found to degrade with photon exposure and some did not. Calibration standards were made for GaAs/Ge solar cells by flight on a high altitude balloon.
Document ID
19890011178
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Anspaugh, B. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
September 5, 2013
Publication Date
December 15, 1988
Subject Category
Energy Production And Conversion
Report/Patent Number
JPL-PUBL-88-39
NASA-CR-184863
NAS 1.26:184863
Accession Number
89N20549
Funding Number(s)
CONTRACT_GRANT: NAS7-918
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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