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Fabrication of large-area CCD detectors on high-purity, float-zone siliconIn this report on the fabrication of a 1024 x 1024 charge coupled device (CCD) imager to be used as a soft x-ray sensor onboard the Advanced X-ray Astronomical Facility (AXAF), the following conclusions were found: the dislocations that limited the performance of the high resistivity imager were characterized; the sources of stress were identified and the dislocations found were eliminated; and a charge transfer inefficiency (CTI) of 10(exp -6) and read noise as low as 1.3/e was demonstrated. This sensor must have low noise and a low CTI and must be radiation hardened to withstand any radiation damage from a space environment.
Document ID
19960016284
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Gregory, J. A.
(Massachusetts Inst. of Tech. Lexington, MA United States)
Burke, B. E.
(Massachusetts Inst. of Tech. Lexington, MA United States)
Cooper, M. J.
(Massachusetts Inst. of Tech. Lexington, MA United States)
Mountain, R. W.
(Massachusetts Inst. of Tech. Lexington, MA United States)
Kosicki, B. B.
(Massachusetts Inst. of Tech. Lexington, MA United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1995
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-CR-200190
NAS 1.26:200190
Meeting Information
Meeting: 7th European Semiconductor Detector Conference
Country: Germany
Start Date: May 7, 1995
Accession Number
96N22175
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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