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Silicon Carbide Power Device Performance Under Heavy-Ion IrradiationHeavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.
Document ID
20150020905
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD United States)
Casey, Megan (NASA Goddard Space Flight Center Greenbelt, MD United States)
Topper, Alyson (ASRC Federal Space and Defense Greenbelt, MD, United States)
Wilcox, Edward (ASRC Federal Space and Defense Greenbelt, MD, United States)
Phan, Anthony (ASRC Federal Space and Defense Greenbelt, MD, United States)
Ikpe, Stanley (NASA Langley Research Center Hampton, VA, United States)
LaBel, Ken (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
November 6, 2015
Publication Date
July 16, 2015
Subject Category
Quality Assurance And Reliability
Space Radiation
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN25023
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference (NSREC)
Location: Boston, MA
Country: United States
Start Date: July 13, 2015
End Date: July 17, 2015
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: NNG13CR48C
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
single-event effect
total ionizing dose (TID)
Schottky diodes
SiC power MOSFETs
radiation hardness assurance

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