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Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 CWe have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 C [1, 2]. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 C [3]. However, this thermal ramp was not ended until a peak temperature of 880 C (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology. Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 C. In one test, the temperature was ramped and then held at 727 C, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 C before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 C (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 C.
Document ID
Document Type
Conference Paper
Spry, David
(NASA Glenn Research Center Cleveland, OH United States)
Neudeck, Phil
(NASA Glenn Research Center Cleveland, OH United States)
Chen, Liangyu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Chang, Carl
(Vantage Partners, LLC Brook Park, OH, United States)
Lukco, Dorothy
(Vantage Partners, LLC Brook Park, OH, United States)
Beheim, Glenn M
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
October 27, 2016
Publication Date
March 17, 2016
Subject Category
Solid-State Physics
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: SPIE Defense + Commercial Sensing
Location: Baltimore, MD
Country: United States
Start Date: March 17, 2016
End Date: March 21, 2016
Sponsors: International Society for Optical Engineering
Funding Number(s)
WBS: WBS 109492.
Distribution Limits
Public Use Permitted.
Silicon Carbide
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