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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 CProlonged 500 degrees Celsius to 700 degrees Celsius electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability limits of the present version of NASA Glenn's extreme temperature microelectronics technology. The results of this study support the hypothesis that T ≥ 500 degrees Celsius durability-limiting IC failure initiates with thermal-stress-related crack formation where dielectric passivation layers overcoat micron-scale vertical features including patterned metal traces.
Document ID
Document Type
Conference Paper
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liangyu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Lukco, Dorothy
(Vantage Partners, LLC Cleveland, OH, United States)
Chang, Carl W.
(Vantage Partners, LLC Cleveland, OH, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
February 17, 2017
Publication Date
September 25, 2016
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016
Location: Halkidiki
Country: Greece
Start Date: September 25, 2016
End Date: September 29, 2016
Sponsors: Foundation for Research and Technology
Funding Number(s)
WBS: WBS 109492.
Distribution Limits
Public Use Permitted.
high temperature
integrated circuits
silicon carbides
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