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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 C to 700 CThis ECSCRM 2016 submission presents further electrical testing and microscopic post-failure studies aimed at more comprehensive understanding of the durability limits of this extreme temperature IC technology. The results summarized represent an unprecedented combination of T 500 C semiconductor IC durability and functionality.
Document ID
20170003911
Document Type
Presentation
Authors
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liangyu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Lukco, Dorothy
(Vantage Partners, LLC Cleveland, OH, United States)
Chang, Carl W.
(Vantage Partners, LLC Cleveland, OH, United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH United States)
Date Acquired
April 26, 2017
Publication Date
September 25, 2016
Subject Category
Metals And Metallic Materials
Electronics And Electrical Engineering
Solid-State Physics
Report/Patent Number
GRC-E-DAA-TN35733
Meeting Information
Meeting: European Conference on Silicon Carbide and Related Materials
Location: Halkidiki
Country: Greece
Start Date: September 25, 2016
End Date: September 29, 2016
Sponsors: Foundation for Research and Technology
Funding Number(s)
CONTRACT_GRANT: NNC13BA10B
CONTRACT_GRANT: NNC12BA01B
WBS: WBS 109492.02.03.02.11.01
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
silicon carbides
high temperature
integrated circuits
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