NTRS - NASA Technical Reports Server

As of October 27, 2023, NASA STI Services will no longer have an embargo for accepted manuscripts. For more information visit NTRS News.

Back to Results
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit ResistorsThe DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Document ID
Document Type
Conference Paper
Neudeck, Philip G.
(NASA Glenn Research Center)
Date Acquired
January 18, 2018
Publication Date
September 17, 2017
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
Meeting Information
Meeting: International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017
Location: Washington, DC
Country: United States
Start Date: September 17, 2017
End Date: September 22, 2017
Sponsors: Materials Research Society
Funding Number(s)
WBS: WBS 109492.
Distribution Limits
Work of the US Gov. Public Use Permitted.
No Preview Available