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Demonstration of 4H-SiC JFET Digital ICs Across 1000 °C Temperature Range Without Change to Input VoltagesOperational testing of prototype 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from -190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.
Document ID
20190027358
Document Type
Conference Paper
Authors
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH, United States)
Spry, David J. (NASA Glenn Research Center Cleveland, OH, United States)
Krasowski, Michael J. (NASA Glenn Research Center Cleveland, OH, United States)
Prokop, Norman F. (NASA Glenn Research Center Cleveland, OH, United States)
Chen, Liangyu (Ohio Aerospace Inst. Cleveland, OH, United States)
Date Acquired
July 17, 2019
Publication Date
September 2, 2018
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN58766
Meeting Information
Meeting: European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)
Location: Birmingham
Country: United Kingdom
Start Date: September 2, 2018
End Date: September 6, 2018
Sponsors: University of Warwick
Funding Number(s)
WBS: 811073.02.42.01.12
CONTRACT_GRANT: NNC13BA10B
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
NASA Technical Management

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