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Effect of mechanical strain on p-n junctionsEffect of mechanical strain on electrical characteristics of germanium and silicon p-n junction devices
Document ID
19650021352
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Wortman, J. B. (Research Triangle Inst. Durham, NC, United States)
Date Acquired
August 2, 2013
Publication Date
August 1, 1965
Subject Category
Physics, Solid-State
Report/Patent Number
NASA-CR-275
Report Number: NASA-CR-275
Accession Number
65N30953
Funding Number(s)
CONTRACT_GRANT: NASR-222
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
ELECTRIC PROPERTY
SILICON JUNCTION
GERMANIUM
N-P JUNCTION

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