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Epitaxial process for development for monolithic complementary MOS-FET structure with oxide barrier isolation Final report, 15 Mar. - 15 Sep. 1965Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices
Document ID
19660006699
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Skouson, G. W. (Westinghouse Electric Corp. Baltimore, MD, United States)
Date Acquired
August 3, 2013
Publication Date
January 1, 1965
Subject Category
Machine Elements And Processes
Report/Patent Number
NASA-CR-69680
Report Number: NASA-CR-69680
Accession Number
66N15988
Funding Number(s)
CONTRACT_GRANT: NAS5-3758
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
EPITAXIAL DEPOSITION
SILICON
P-TYPE SEMICONDUCTOR
ETCHING
N-TYPE SEMICONDUCTOR

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