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Metal Oxide Semiconductor /MOS/ transistor research and development program. Part II - Development of stable complementary MOS FIELD effect transistors Final report, Mar. - Nov. 1965Simultaneous fabrication of enhancement mode metal oxide semiconductor transistors in epitaxial material
Document ID
19660012009
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Cricchi, J. R. (Westinghouse Electric Corp. Baltimore, MD, United States)
White, M. H. (Westinghouse Electric Corp. Baltimore, MD, United States)
Date Acquired
August 3, 2013
Publication Date
January 1, 1965
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-70390
Report Number: NASA-CR-70390
Accession Number
66N21298
Funding Number(s)
CONTRACT_GRANT: NAS5-3758
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
TRANSISTOR
METAL OXIDE SEMICONDUCTOR /MOS/
PRODUCTION ENGINEERING
EPITAXIAL DEPOSITION

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