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High power switching transistor Final reportDesign theory and fabrication procedure for n-p-n 100 ampere silicon switching transistor
Document ID
19670002832
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Beaudouin, J. (ITT Federal Labs. Palo Alto, CA, United States)
Finch, R. (ITT Federal Labs. Palo Alto, CA, United States)
Date Acquired
August 3, 2013
Publication Date
May 1, 1966
Subject Category
Electronic Equipment
Report/Patent Number
NASA-CR-80141
Report Number: NASA-CR-80141
Accession Number
67N12161
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: JPL-951156
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
SILICON TRANSISTOR
SWITCHING ELEMENT
N-P-N JUNCTION

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