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Modification to improve self-isolating transistor arraysFabrication process improves the size ratio and shape factor of the base region of self-isolating transistor arrays. Basic processing steps in the modified method include, sub-diffusion, epitaxial layer growth, isolation-diffusions, enhancement diffusions, aluminum interconnect deposition, and testing and packaging.
Document ID
19690000607
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Farnsworth, D. L.
Date Acquired
August 5, 2013
Publication Date
December 1, 1969
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-20499
Report Number: MFS-20499
Accession Number
69B10678
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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